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      Michael E. Flatté

      Michael Flatte picture

      Dr. Flatté is the Director of the Optical Science and Technology Center and is the F. Wendell Miller Professor in the Department of Physics and Astronomy and Department of Electrical and Computer Engineering at the University of Iowa. He received the BA in Physics from Harvard University in 1998, and the Ph.D. from the University of California, Santa Barbara (UCSB) in 1992. His postdoctoral work was performed at the Institute for Theoretical Physics, UCSB, and the Division of Applied Sciences at Harvard University. He has four U.S. patents, has edited one book and has published seven book chapters, five reviews and over 150 papers. His expertise includes the theory of spin currents [1-4] and spin relaxation [5] in semiconductors, g-tensors, domain-wall motion and spin transport across domain walls [6]. Dr. Flatté also developed the theory of spin packet motion in the presence of drift fields [1-2], performed the first quantitatively-accurate calculations of spin coherence times in III-V semiconductor heterostructures [5], invented several novel spin transistor frameworks [7-9].


      1. M. E. Flatté and J. M. Byers, “Spin diffusion in semiconductors,” Phys. Rev. Lett. 84, 4220 (2000).
      2. Z. G. Yu and M. E. Flatté, “Spin diffusion and injection in semiconductor structures: electric field effects,” Phys. Rev. B 66, 235302 (2002).
      3. E. M. Hankiewicz, G. Vignale, and M. E. Flatté, “Spin-Hall effect in a [110] quantum well,” Phys. Rev. Lett. 97, 266601 (2006).
      4. Y. Qi, Z. G. Yu, and M. E. Flatté, “Spin Gunn effect”, Phys. Rev. Lett. 96, 026602 (2006).
      5. W. H. Lau, J. T. Olesberg and M. E. Flatté, “Electron-spin decoherence times in bulk and quantum well zinc-blende semiconductors,” Phys. Rev. B 64, 161301(R) (2001).
      6. G. Vignale and M.E. Flatté, “Nonlinear spin-polarized transport through a ferromagnetic domain wall,” Phys. Rev. Lett. 89, 098302 (2002).
      7. K. C. Hall and M. E. Flatté, “Performance of a spin-based insulated gate field effect transistor,” Appl. Phys. Lett. 88, 162503 (2006).
      8. M. E. Flatté, Z. G. Yu, E. Johnston-Halperin and D. D. Awschalom, “Theory of semiconductor magnetic bipolar transistors,” Appl. Phys. Lett. 83, 4740 (2003).
      9. M. E. Flatté and G. Vignale, “Unipolar spin diodes and transistors,” Appl. Phys. Lett. 78, 1273 (2001).
       
       
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